HexaTech has received a $2.2 million award from the U.S. Department of Energy Advanced Research Projects Agency – Energy (ARPA-E) that will enable the development of a new power semiconductor technology for the modernization of the electrical power grid.
HexaTech's aluminum nitride technology was identified by the DOE as a technology with technical promise.
Using low dislocation density single crystal AlN substrates, HexaTech will develop contact metals for AlN/AlGaN with high Al content. Experimental devices based on silicon carbide technology are currently being developed.
Compared to SiC technology, it is expected that aluminum nitride will enable power electronics with a 10X improvement in performance. Based on the wide bandgap material properties of AlN, the critical field is 6X larger, the on resistance will be lower, and the resulting power device area will be smaller for a comparable power level.
HexaTech's current product lines include single crystal and polycrystalline AlN substrates. Long life UV-C LEDs and high voltage power devices based on AlN substrates are also in development.